1N4148WS / 1N4448WS / 1N91
4BWS — Small Signal Diodes
? 2012 Fairchild Semiconductor Corporation
www.fairchildsemi.com
1N4148WS / 1N4448WS / 1N914BWS Rev. B0 1
April 2012
1N4148WS / 1N4448WS / 1N914BWS
Small Signal Diodes
Features
? General Purpose Diodes
? Fast Switching Device (TRR
< 4.0ns)
? Very Small and Thin SMD Package
? Moisture Level Sensitivity 1
? Pb-free Version and RoHS Compliant
? Matte Tin (Sn) Lead Finish
? Green Mold Compound
Absolute Maximum Ratings*
Ta
= 25
°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
The factory should be consul
ted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
* Device mounted on FR-4 PCB minimum land pad.
Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter Value Units
VRSM
Non-Repetitive Peak Reverse Voltage 100 V
VRRM
Repetitive Peak Reverse Voltage 75 V
IFRM
Repetitive Peak Forward Current 300 mA
IO
Continuous Forward Current 150 mA
TJ
Operating Junction Temperature +150
°C
TSTG
Storage Temperature Range -55 to +150
°C
Symbol
Parameter Value Units
PD
Power Dissipation (TC
= 25
°C) 200 mW
RθJA
Thermal Resistance, Junction to Ambient *
500
°C/W
Symbol
Parameter Test Conditions
Min. Typ. Max.
Units
BVR
Breakdown Voltage IR
= 100
μA
IR
= 5
μA
100
75
V
V
IR
Reverse Current VR
= 20 V
VR
= 75 V
25
5
nA
μA
VF
Forward Voltage 1N4448WS/914BWS
IF
= 5 mA
IF
= 10 mA
IF
= 100 mA
1N4148WS
1N4448WS/914BWS
0.62 0.72
1
1
V
V
V
CO
Diode Capacitance VR
= 0, f = 1 MHz 4 pF
TRR
Reverse Recovery Time IF = 10 mA, IR = 60 mA,
IRR = 1 mA, RL
= 100
Ω
4ns
Band Indicates Cathode
1. Cathode
ELECTRICAL SYMBOL
2. Anode
SOD-323 Flat Lead
Device Marking Code
Device Type Device Marking
1N4148WS S1
1N4448WS S2
1N914BWS
S3
2
1
相关PDF资料
1N4448WT DIODE 75V 200MA SOD523F
1N4454 DIODE HI CONDUCTANCE 50V DO-35
1N456ATR DIODE HI CONDUCTANCE 30V DO-35
1N457A DIODE HI CONDUCTANCE 70V DO-35
1N458A DIODE HI CONDUCTANCE 150V DO-35
1N4594R RECTIFIER STUD 1000V 150A DO-8
1N459TR DIODE HI CONDUCTANCE 200V DO-35
1N483B DIODE SS 80V 200MA DO-35
相关代理商/技术参数
1N4448WS _R1 _00001 制造商:PanJit Touch Screens 功能描述:
1N4448WS RR 制造商:SKMI/Taiwan 功能描述:Diode Small Signal Switching 100V 0.15A 2-Pin SOD-323F T/R
1N4448WS RRG 功能描述:DIODE GEN PURP 100V 150MA SOD323 制造商:taiwan semiconductor corporation 系列:- 包装:带卷(TR) 零件状态:在售 二极管类型:标准 电压 - DC 反向(Vr)(最大值):100V 电流 - 平均整流(Io):150mA 不同 If 时的电压 - 正向(Vf:1V @ 100mA 速度:小信号 =< 200mA(Io),任意速度 反向恢复时间(trr):4ns 不同?Vr 时的电流 - 反向漏电流:5μA @ 75V 不同?Vr,F 时的电容:4pF @ 0V,1MHz 安装类型:表面贴装 封装/外壳:SC-90,SOD-323F 供应商器件封装:SOD-323F 工作温度 - 结:-65°C ~ 150°C 标准包装:3,000
1N4448WS_ R2 _00001 制造商:PanJit Touch Screens 功能描述:
1N4448WS_06 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:SURFACE MOUNT FAST SWITCHING DIODE
1N4448WS_08 制造商:RECTRON 制造商全称:Rectron Semiconductor 功能描述:SMALL SIGNAL DIODE VOLTAGE RANGE 75 Volts CURRENT 250 mAmpere
1N4448WS_1 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:Fast Switching Surface Mount Diode
1N4448WS_10 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SURFACE MOUNT FAST SWITCHING DIODE